Abstract
The pits in Ge-doped GaN grown by hydride vapor phase epitaxy were carefully studied. It was found that the pit density increases with Ge concentration and dislocation density. Cross-sectional cathodoluminescence (CL) image shows that the embedment of pit occurs immediately after the cut off of Ge precursor. Planar-view CL image shows that the center of every pit is a dislocation, which is further confirmed by transmission electron microscopy measurements. Ge droplets were found in the center of pits of heavily doped samples. These results are beneficial for the study on the origin of pits in Ge-doped GaN.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
