Abstract
In this paper a new type of device in considered - the gyroresonating device with modulation of electron emission. In conventional gyrodevices electron bunching occurs due to the relativistic changing of electron mass. However, if in a gyrotron or gyroklystron the cathode in placed in a RF field of the resonator, this will result in emission modulation and the electron bunches will be created right on the cathode. The emission modulation is especially effective in devices with field emission. A flat diode model with a magnetic slanting static field is used to investigate the interaction of electron bunches with electromagnetic RF field. This model describes in a unified way the conventional diode, the gyroresonance mode and the flat magnetron with a transverse RF field. Neglecting the space charge allowed to obtain analytical solutions and compare the efficiency of beam-field interaction in the above cases.
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