Abstract
Localised levels inducing high photosensitivity in CdGaInS4 crystals are investigated. An electrical conductivity increase of about 108 and 105 in magnitude was measured at 110 K and 300 K respectively, under an illumination power of about 1 mW cm-2. A photoconductivity spectral response displaying a maximum at 2.64 eV and 300 K with a thermal shift of about 5*10-4 eV K-1 in the range 77-300 K has been observed. The high photosensitivity and a super-linear region in the lux-ampere characteristics (LAC) have been explained by assuming the presence of sensitising and recombination centres following the Rose-Bube model. By studying the thermal quenching of photoconductivity, a concentration Ns>1015 cm-3, an ionisation energy Es=0.24 eV and a ratio of the electron to hole capture cross section of sensitising centres Sn/Sp=(2-5)*10-4 were calculated. The origin of these centres is hypothesised to be due to anti-structural defects caused by a partial redistribution of the Cd-Ga atoms within the cationic sub-lattice.
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