Abstract
The concentrations of defects forming at near-midgap level in high-resistivity CdTe were estimated on the basis of room-temperature lux-ampere characteristics. A simple model explaining their sublinear dependence based on the presence of discrete levels near the midgap is presented. It is shown that accumulation of space charge in the sample can explain the observed experimental data. Theoretical calculations show that a maximum concentration of the midgap level leading to the observed slope α of lux-ampere characteristic, Iph=C×Iα, is less than 1013 cm−3 for a wide range of capture cross sections of electrons and holes. This result supports models that assume formation of a high-resisitivity state with a minimum deep-level doping.
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