Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide

Abstract

Characteristics of metal–oxide–semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated by direct oxidation of C-face 4H-SiC in NO were investigated. It was found that nitridation of the C-face 4H-SiC MOS interface generates near-interface traps (NITs) in the oxide. These traps capture channel mobile electrons and degrade the performance of MOSFETs. The NITs can be reduced by unloading the samples at room temperature after oxidation. It is important to reduce not only the interface states but also the NITs to fabricate high-performance C-face 4H-SiC MOSFETs with nitrided gate oxide.