Abstract
A SiGeSn/GeSn/SiGeSn single quantum well structure featuring type-I band alignment was comprehensively characterized. Three pump lasers with different penetration depths and photon energies were used to pinpoint the optical transition characteristics of the sample. The carrier generation, redistribution, and recombination under each pumping condition were analyzed in detail. By comparing the temperature-dependent photoluminescence spectra of the GeSn quantum well with that of SiGeSn and GeSn thin film samples possessing similar Si and Sn compositions, the optical transition mechanism was clearly identified.
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