Abstract
In this study, crystalized indium–gallium oxide (c-IGO) thin-film transistors (TFTs) were fabricated. By applying illumination with three wavelengths and conducting recovery tests, we thoroughly investigated the mechanism for light-induced instability. Results showed that the ionization of oxygen vacancy (VO) had the greatest impact. Through nitrogen doping during channel deposition, the VO-ionization was considerably suppressed. The XPS results also revealed that the incorporated nitrogen filled oxygen vacancies and enhanced the binding energy. This approach was evident to decrease the proability of VO-ionization and improve the recovery performance simultaneously. The c-IGO TFT with N-doping channel layer was proven to have better ambient stability under light stress.
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