Abstract
Ni-doped Ge-Te (Ni-GT) material was proposed and investigated for phase change random access memory (PCRAM) applications. With Ni addition, the crystallization temperature, data retention ability and crystallization speed were obviously improved. The surface roughness of crystalline Ni-GT films was decreased by Ni incorporation. Moreover, temperature dependent transmission electron microscopy (TEM) was applied to investigate the phase change behavior of Ni-GT films. All the experimental results demonstrated that Ni-GT material has potential for high-speed PCRAM applications in high temperature environment.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
