Abstract
Neutron radiation induced defects in neutron-transmutation doped (NTD) silicon containing preexisting electron traps have been investigated by means of high discriminability deep level transient spectroscopy (HDDLTS). The experimental results show that the preexisting defects influence the formation and annealing behavior of neutron radiation-induced defects, and reduce the introduction rates of some radiation defects. Some of the radiation defects and the preexisting defects are suggested to be di- or multi-vacancy complexes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
