Efficiency of formation of radiation defects in silicon upon implantation of silicon and phosphorus ions

Abstract

Accumulation and annealing of radiation defects in silicon and in the heavily phosphorus doped silicon layers implanted with Si + or P + ions have been studied by the X-ray diffraction method. The observed differences in the introduction rates of stable radiation defects are due to the differences between the intensities of annihilation processes determined by charge states of defects.