Abstract
Negative differential resistance (NDR) is observed in various emerging electronic devices. As compared to the conventional silicon-based field effect transistor (FET), the NDR is widely investigated in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs. In this work, we study the NDR effect for the TMD-based metal-edge-contact MoS2 double-gate FET with 10 nm channel length. The multiscale atomistic simulation is demonstrated for the lateral heterostructure of a metal–semiconductor–metal FET by density functional theory, maximally localized Wannier function tight-binding Hamiltonian, and non-equilibrium Green’s function methods. The quantum transport model in the given lateral heterostructure resulted in NDR in a double-gate FET. Here, we focus on the NDR by the systematic study of the transmission spectrum of the metal-edge-contact MoS2 channel FET and finally compare it with zero NDR ideal highly doped FET. The peak-to-valley ratio in the NDR response can be modulated with the change in the gate-to-source voltage and can be used to explore various future electronic applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
