Abstract
The optical and physical properties of N-face AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) are investigated numerically and compared with Ga-face AlGaN based UV-LEDs. A composition-varying AlGaN electron blocking layer (EBL) is introduced in the N-face AlGaN UV-LEDs. Detailed analysis has been carried out on the electroluminescence spectra, power-current performance curves, energy band diagrams, carrier concentration and radiative recombination rate. The calculated results demonstrate that theN-face UV-LED with composition-varying AlGaN EBL reveals enhanced performance than that of the Ga-face UV-LED with the same structure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
