Abstract
The optical property and injection efficiency of N-face AlGaN based ultraviolet light emitting diodes (UV-LEDs) are studied and compared with Ga-face AlGaN based UV-LEDs. A staircase electron injector is introduced in the N-face AlGaN based UV-LED. The electroluminescence spectra, power-current performance curves, energy band diagrams, carrier concentration and radiative recombination rate are numerically calculated. The results indicate that the N-face UV-LED has a better optical performance than the Ga-face UV-LED, and the injection efficiency is enhanced owing to the fact that the staircase electron injector is available for UV-LEDs.
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