Abstract
Electrical properties of metal oxide semiconductor (MOS) capacitors with gate stacks of epitaxial gadolinium oxide (Gd 2O 3) and titanium nitride (TiN) are studied. The influence of CMOS compatible rapid thermal annealing on these gate stacks is examined. Finally, n- and p-type MOS-field effect transistors (MOSFETs) on silicon on insulator (SOI) material with epitaxial Gd 2O 3 and TiN gate electrodes are presented.
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