Abstract
We report on an investigation into the molecular-beam epitaxial growth and characterization of InAs/InxGa1−xSb (0≤x≤0.4) heterojunctions and strained-layer superlattices (SLS) for long-wavelength infrared detector applications. All structures have been grown on GaSb(100) substrates with period thicknesses of the SLS in the range 25–180 Å. Interface properties of single heterojunction structures have been characterized by x-ray photoelectron spectroscopy and secondary-ion mass spectroscopy depth profiles, and structural properties of the SLS have been assessed by transmission electron microscopy and x-ray diffraction analysis. For growth at an optimal temperature (390 °C) the SLS are of high structural quality, with no evidence of compound formation at either (GaSb/InAs, InAs/GaSb) interface, or of post-growth interdiffusion. However, significant levels of As (7%) are found to be present in nominally grown InxGa1−xSb layers, resulting from incorporation from background. Fourier transform infrared absorption spectra of SLS samples have shown absorption thresholds out to 19 μm.
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