Investigation of mixed irradiation effects in p-MCz thin silicon microstrip detector for the HL-LHC experiments

Abstract

A lot of R&D work is carried out in the CERN RD 50 collaboration to find out the best material for the Si detectors that can be used in the harsh radiation environment of HL-LHC, n and p-MCz Si was identified as one of the prime candidates as a material for strip detector that can be chosen for the phase 2 upgrade plan of the new Compact Muon Solenoid Tracker detector in 2026. In this work, four level deep-trap mixed irradiation model for p-MCz Si is proposed by the comparison of experimental data on the full depletion voltage and leakage current to the Shockley Read Hall recombination statistics results on the mixed irradiated p-MCz Si PAD detector. The effective introduction rate (η eff) of shallower donor deep trap E30K is extracted using SRH theory calculations for experimental N eff and that can show the behavior of space charges and electric field distribution in the p-MCz Si strip detector and compared its value with the η eff of shallower donor deep trap E30K in the nMCz Si microstrip detector. Prediction uncertainty in the p-MCz Si radiation damage mixed irradiation model is considered in the full depletion voltage and leakage current. A very good agreement is observed in the experimental and SRH results. This radiation damage model is also used to extrapolate the value of the full depletion voltage at different mixed (proton + neutron) higher irradiation fluences for the thin p-MCz Si microstrip detector.