Abstract
Using a modified Gaussian approximation to the depth distribution of the energy dissipation function for electron bombardment, an analytical expression was derived for electron-beam-induced current (EBIC) at a Schottky barrier parallel to the bombarded surface. Comparison of theory and experiment for the voltage dependence of EBIC for 14 specimens (including p- and n-type GaAs and Si) provided values for the diffusion length of excess carriers, the thickness of the metal layer of the Schottky barrier diode, and the average energy ℰ required to generate a hole-electron pair. Diffusion lengths ranging from 0.41 to 55 μ were determined with an estimated accuracy of ±20%. The values of ℰ were found to be 3.75±0.11 eV for Si and 4.68±0.14 eV for GaAs. The unique advantages of this method for measuring small diffusion lengths are emphasized.
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