Abstract
The diffusion length of minority carriers in n-CuInS2 crystals grown under different values of nonmolecularity Δm is examined by electron-beam-induced current (EBIC) experiments. Current profiles are recorded in edge-scan and planar configurations. The values of the diffusion length are obtained by comparison with modeled profiles showing reasonable agreement between both experimental configurations. The defect-electron diffusion length varies from 0.4±0.15 to 1.25±0.25 μm for samples prepared with Δm=−0.09 to Δm=−0.2, respectively. From EBIC profiles in the edge-scan configuration the surface recombination velocity can be estimated to about S=104 cm s−1 for unpassivated CuInS2 samples.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
