Investigation of microwave power limiter for Industrial Scientific Medical band (ISM) applications

Abstract

In this paper, a new design of microstrip power limiter which is based on microstrip technology and zero bias Schottky diode is introduced. In this context, the FR-4 substrate that was characterized by dielectric permittivity (4.4), dielectric thickness (1.6 mm), and the HSMS 286k Schottky diode is used to design the proposed power limiter. The planar resonators are designed, optimized, and simulated with the shunting of the HSMS 286k diodes by using Schematic solver integrated in ADS from Agilent Technologies. The simulation results are significant in terms of high impedance matching, strong insertion of the low power, and good limitation ratio of the high power. The proposed power limiter is fabricated and tested in the measurement part. It is observed that the results are in agreement with the numerical analysis in terms of matching, isolation, and power limitation. The achieved microwave power limiter offers simple construction, small size (44 × 40 mm2), wide bandwidth, and good limitation ratio less than 10 dBm when the input power reaches 30 dBm.