Abstract
Polycrystalline CdTe films were grown on CdS/SnO2/glass substrates by metalorganic chemical vapor deposition (MOCVD) for solar cell applications. Cells fabricated on these films showed efficiency of 9.7% which is the highest efficiency reported so far for MOCVD grown CdTe solar cells. The bias-dependent spectral response of the 9.7% efficient cell showed an external quantum efficiency greater than 0.85 at zero bias but a significant wavelength-independent reduction in spectral response at higher voltages. The interface recombination model was used to calculate the interface collection function term to quantify the open-circuit voltage (Voc) and fill factor losses in the high efficiency cell. It was found that the interface recombination reduces the Voc and fill factor by 60 mV and 0.1 respectively. It was estimated that efficiency as high as 13.5% can be achieved by improving CdTe/CdS interface quality.
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