Abstract
Diluted magnetic semiconductor based on indium oxide has been prepared by transition metal ion implantation. Fe and Cu ions have been implanted into pulsed laser deposition prepared pure In2O3 films by metal vapor vacuum arc source with doses from 5×1015cm−2 to 1×1017cm−2, respectively. The implanted samples are annealed in the air subsequently. The structure of In2O3 films is characterized by X-ray diffraction. X-ray photoelectron spectroscopy measurements are applied to confirm the electronic state of the implanted ions. Superconducting quantum interference device measurements at room temperature disclose that the diamagnetic In2O3 films turned to be ferromagnetic after Fe and Cu ion implantation. The correlation between ferromagnetism and implantation conditions is tested. The ferromagnetism is attributed to the bound magnetic polarons formed by Fe, Cu ion implantation.
Published Version
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