Abstract
In this work, n-GZO/a:amorphous-Si(i:intrinsic)/p + -Si photodiodes are fabricated. We employed a nanosphere lithographictechnique to obtain nanoscale patterns on either the a-Si(i) orp + -Si surface. As comparedwith the planar n-GZO/p + -Si diode, the devices with nanopatterned a-Si(i) and nanopatternedp + -Si substrates show a 32% and 36.2% enhancement of photoresponsivity. Furthermore, theacceptance angle measurement reveals that the nanostructured photodiodes have largeracceptance angles than the planar structure. It also shows that the device with thenanocone structure has a higher acceptance angle than that with the nanorod structure.
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