Abstract
Investigation of ionizing radiation mechanisms on HfO2-based ferroelectric thin-film memories with various configurations
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of materials science. Materials in electronics
Paper Title
Journal
Date
