Abstract
The intersubband transition optical absorption (ITOA) properties of Zn1−xMgxO/MgO/ZnO heterostructures are investigated by the density matrix method. To calculate the electronic structure parameters in the proposed quantum well structure, a numerical method of solving the Schrödinger equation and Poisson equation self-consistently is carried out with considering the impact of the built-in electric field (BEF) induced by spontaneous polarization and piezoelectric polarization. The results show that the strong BEF is on the order of MV/cm and it can be modulated effectively by the Mg compositions in the Zn1−xMgxO barrier layer. Moreover, with the increase of Mg compositions or MgO insertion layer thickness, the decrease of ZnO well layer or ZnMgO barrier layer thickness, the peaks of ITOA coefficients increase and show pronounced blue shifts. This work is helpful for the research and development of ZnMgO/MgO/ZnO heterostructure devices.
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