Investigation of interface and band gap states in amorphous silicon p—i—n solar cells using current deep level transient spectroscopy

Abstract

Abstract Current deep level transient spectroscopy (DLTS) studies were performed on as-deposited and reverse biased annealed samples of a-Si:H p—i—n solar cells. These studies indicate interface states at p/i and i/n junctions, in addition to the band gap states in the i-layer. The hole and electron trap states are located at 0.8 and 1.12 eV, respectively, above the valence band, whereas the interface states at the p/i junction are located at 0.55 eV and those at the i/n junction at 1.2 eV above the valence band. A decrease in the interface states with reverse biased annealing treatment has been observed.