Abstract
Photodetectors are key components in every photonic sensors like photonics, bio-signal detection in health care and internet of things, etc.1-3To serve as the converter from the optical to the electrical signal, the photodetector should offer high responsivity and sensitivity. Avalanche photodiodes are widely used as opto-electronic converter for highly-sensitive optical receivers. For covering the spectral range from 800 nm to 1600 nm wavelength, the avalanche photodiodes are needed sophisticated layer structures and supply voltage values in excess of 20 V. Particularly, the avalanche photodiodes are not appropriate to apply in comfortable applications like wearable devices and smart phones. In addition, the operation of the photodetector should be facilitated by a compact size, a low power supply voltage and temperature insensitivity. To overcome this problem, InGaAs-baed PIN photodiodes are investigated to obtain a high quantum efficiency and low leakage current. Figure 1
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