Investigation of high-speed modulaiton of 1.3&amp;#x03BC;m InAs/InGaAs quantum dot VCSELs

C.Z Tong,D.W Xu,W.J Fan,S.F Yoon,Y Ding

doi:10.1109/icbnmt.2009.5347816

Investigation of high-speed modulaiton of 1.3&#x03BC;m InAs/InGaAs quantum dot VCSELs

C.Z Tong, D.W Xu + Show 3 more

https://doi.org/10.1109/icbnmt.2009.5347816

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Publication Date: Oct 1, 2009

Citations: 11

Affiliation: Nanyang Technological University

#Quantum Dot Uniformity #Quantum Dot Density + Show 8 more

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Abstract

The influence of quantum dot (QD) density, uniformity and layer number on the 3 dB bandwidth of 1.3 mum InAs-InGaAs QD VCSELs is investigated by the small signal analysis of all-pathway rate equations. The dependence of bandwidth on the QD density is shown. Linearly dependence of bandwidth on the QD uniformity is demonstrated. High speed operation (> 10 GHz) of QD VCSEL emitting at 1.3 mum is predicated.

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