Investigation of high speed β-Ga2O3 growth by solid-source trihalide vapor phase epitaxy

Abstract

Trihalide vapor phase epitaxy (THVPE) is a new type of halide vapor phase epitaxy (HVPE) that uses GaCl3 as a group III source, enabling Ga2O3 growth without particle generation, although the growth rate is low. In this study, β-Ga2O3 is grown by THVPE using solid GaCl3 as a group III precursor. The growth rate increases linearly with increasing partial pressure of the precursor. The dependence of the growth rate on the VI/III ratio is revealed on sapphire substrates, with the growth rate reaching a maximum at a VI/III ratio of 95. We have also obtained a growth rate of 32.2 μm h−1 on β-Ga2O3 (001) substrates with no particle generation, crystal quality equivalent to that of the substrate, and high purity equivalent to that of HVPE.