Abstract
β-gallium oxide (Ga2O3) was grown by tri-halide vapor phase epitaxy (THVPE) using gaseous GaCl3 and O2 as precursors. The growth rate linearly increased with increasing ratios of input partial pressure of O2 against GaCl3, and further, it was found the β-Ga2O3 growth by THVPE successfully suppressed the gas phase reaction and decreased Ga2O3 particles observed in halide vapor phase epitaxy (HVPE) by changing the ratio of the supply partial pressure of the second chlorine against that of the first during the GaCl3 generation. An epilayer with high crystalline quality and high purity equivalent to that grown via HVPE was obtained by newly developed THVPE without any particle formation.
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