Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

Abstract

In this paper, investigation of device geometry on intermodulation distortion (IMD) of metal–oxide–semiconductor field-effect transistors (MOSFETs) is presented in the impact ionization region based on the Volterra analysis. As the gate length or gate width decreases, observed linearity improvement of the MOSFET in the breakdown regime is attributed to the more obvious breakdown inductance nonlinearity which cancels the transconductance nonlinearity. Linearity of the MOSFETs can be improved by choosing suitable device geometry in the breakdown region. It is believed the presented analysis results can benefit the reliability investigation for MOSFET linearity in the breakdown region.