Abstract
The channel resistance from the triode to impact ionization region is determined accurately with the inductive breakdown network considered for different channel length metal–oxide–semiconductor field–effect transistors (MOSFETs). The radio frequency (RF) drain breakdown effect (DBE) and substrate current induced body effect (SCBE) of the MOSFETs in the impact ionization region are distinguished to reveal the channel length dependent channel resistance and breakdown network. The deviation between channel resistance with and without considering the inductive breakdown network increases with reducing channel length due to more significant RF DBE. The presented analysis results can be beneficial to the reliability investigation for RF performance of the MOSFETs in the breakdown region.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
