Abstract
According to the thermal theory, the self-heating effect is equivalent to an R–C thermal equivalent circuit. Based on a small-signal equivalent circuit analysis, an analytical method to extract the thermal resistance and capacitance for RF silicon-on-insulator (SOI) MOSFETs is proposed in this paper. The geometry dependence of the thermal resistance and capacitance is investigated by using this method. The method is verified by using RF partial depletion-SOI process. The results show that the thermal resistance decreases and the thermal capacitance increases as the effective channel area increases. A simple equation to estimate the thermal characteristics is proposed to help optimize the device structure and circuit design for application. This method is easy to scale and adjust to devices with different dimensions and fabrication processes.
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