Abstract
Photodetectors with considerably high performance working in a wide wavelength range extending from UV to IR are essential for technological applications. The present work primarily focuses on the multilayer structure of Ge/Sn/Al2O3 deposited on Si substrate for visible to short wave infrared (SWIR) broadband photodetector applications. The synthesis of a multilayered structure was carried out using electron beam evaporation. Subsequently, these samples were subjected to rapid thermal annealing (RTA). The crystalline nature of films after RTA was examined using X-ray diffraction, and Raman spectroscopy. Afterward, the photodetector measurements were carried out on the fabricated device. The device structure shows better responsivity, external quantum efficiency, detectivity, and noise equivalent power with varying optical power and voltage. The measured responsivity, external quantum efficiency, and detectivity are 1.07 A/W, 125 %, and 2.1 × 109 Jones, respectively. The results indicated the possibility of using the Ge/Sn/Al2O3 multilayered structure as visible to SWIR photodetector.
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