Abstract
Photodetectors with considerably high performance working in a wide wavelength range extending from UV to IR are essential for technological applications. The present work primarily focuses on the multilayer structure of Ge/Sn/Al2O3 deposited on Si substrate for visible to short wave infrared (SWIR) broadband photodetector applications. The synthesis of a multilayered structure was carried out using electron beam evaporation. Subsequently, these samples were subjected to rapid thermal annealing (RTA). The crystalline nature of films after RTA was examined using X-ray diffraction, and Raman spectroscopy. Afterward, the photodetector measurements were carried out on the fabricated device. The device structure shows better responsivity, external quantum efficiency, detectivity, and noise equivalent power with varying optical power and voltage. The measured responsivity, external quantum efficiency, and detectivity are 1.07 A/W, 125 %, and 2.1 × 109 Jones, respectively. The results indicated the possibility of using the Ge/Sn/Al2O3 multilayered structure as visible to SWIR photodetector.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.