Abstract
Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO TFTs) with high transparent gallium zinc oxide (GZO) source/drain electrodes. The influence of post-deposition annealing (PDA) temperature on GZO source/drain and device performance was studied. Device with a 300 °C annealing demonstrated excellent electrical characteristics with on/off current ratio of 2.13 × 108, saturation mobility of 10 cm2/V-s, and low subthreshold swing of 0.2 V/dec. The gate stacked LaAlO3/ZrO2 of AP-IGZO TFTs with highly transparent and conductive AP-GZO source/drain electrode show excellent gate control ability at a low operating voltage.
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