Investigation of gamma induced effects on the properties of gamma irradiated Ce2S3 thin films

Abstract

Nanostructure cerium sulphide (Ce2S3) thin films were prepared using successive ionic layer adsorption and reaction (SILAR). The properties of the prepared samples were investigated as a function of gamma rays’ doses of 0, 250, 500, and 1000Gy, respectively. The X-ray diffraction (XRD) results suggest an orthorhombic phase structure for Ce2S3 thin films and the crystallinity is enhanced with increasing gamma-ray doses. The irradiated thin films exhibit a variation in the energy band gap associated with the quantum confinement effect with larger grain size. This simple strategy of modifying properties of Ce2S3 thin films by the incident gamma rays can be an attractive way to investigate this material for dosimetry and radiation detection.