Abstract
GaAs surface morphology, induced by a new reactive ion beam etching (RIBE) system using a Cl2 gas, has been investigated with scanning electron microscopy (SEM) and laser Raman spectroscopy. Appearance of the TO phonon peak in the Raman spectrum was found to be available for recognizing the surface roughness, which strongly depends on the etching parameters such as an ion extraction voltage (Ve) and a gas pressure (Pg). Rough surface caused at the higher Ve and the lower Pg, say, 500 V and 4×10-4 Torr, respectively, has been made very smooth by increasing the gas pressure to, say, 2×10-3 Torr.
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