Abstract
We have studied the optical properties of lattice-matched GaAs/AlxGa1−xAs and InyGa1−yAs/GaAs strained-layer superlattices grown on Si substrates using the photoreflectance technique. These preliminary results show that good quality III-V epilayers can be grown on Si. The experimental data were compared with calculations based on the envelope-function approximation and fitted to the third-derivative functional form of reflectance modulation theory.
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