Abstract
A Ga2O3/diamond separate absorption and multiplication avalanche photodiode (SAM-APD) with mesa structure has been proposed and simulated. The simulation is based on an optimized Ga2O3/diamond heterostructure TCAD physical model, which is revised by repeated comparison with the experimental data from the literature. Since both Ga2O3 and diamond are ultra-wide bandgap semiconductor materials, the Ga2O3/diamond SAM-APD shows good solar-blind detection ability, and the corresponding cutoff wavelength is about 263 nm. The doping distribution and the electric field distribution of the SAM-APD are discussed, and the simulation results show that the gain of the designed device can reach 5 × 104 and the peak responsivity can reach a value as high as 78 A/W.
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