Abstract
Previously it has been shown that resonant-cavity, separate absorption and multiplication (SAM) avalanche photodiodes (APDs) exhibit high peak external quantum efficiency (∼75%), low dark current, low bias voltage (<15 V), and low multiplication noise (0.2<k<0.3). We describe the frequency response of resonant-cavity AlGaAs/GaAs/InGaAs SAM APDs. A unity-gain bandwidth of 23 GHz and a high gain-bandwidth product of 130 GHz have been achieved.
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