Abstract
The Ba0.8Sr0.2Ti1−2x Ga x Nb x O3 (0 ≤ x ≤ 0.10) ceramics were fabricated and the electrical properties were evaluated regarding DC-bias and temperature characteristics of the dielectric properties. The ceramics with x = 0.10 exhibited a stable dielectric constant with a change of–40% within 25 °C–150 °C. The dielectric loss of all the co-doped ceramics was below 2% within 25 °C–200 °C. The Ba0.8Sr0.2Ti1−2x Ga x Nb x O3 ceramics showed a higher dielectric constant with a lower DC-bias dependence as compared to previous study on co-doped BaTiO3 ceramics. The Ba0.8Sr0.2Ti0.20Ga0.10Nb0.10O3 ceramics exhibited the best results of DC-bias dependence ≈−24%, dielectric constant at 100 kV cm−1 ≈ 560, and the dielectric constant at 0 kV cm−1 ≈ 735. The better results for the Ga–Nb co-doped BST ceramics might be due to the higher contribution of the ionic polarization in the BST base matrix resulting in a shallower potential energy curve.
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