Abstract
This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simulated. MOS diode connection suggested using the FinFET transistor as a temperature nano-sensor. The final results shows that the best FinFET used as a nano- sensor is with GaAs because it has the greatest ΔΙ (=10.9%) referring to ΔΙ at 25°C, and the best FinFET stable with increasing working temperature is Si-FinFET because it has the lowest ΔΙ (=6%) referring to ΔΙ at 25°C.
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