Abstract

In this letter, film growth for amorphous Nb/Si multilayers has been studied by using x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). Results from XRD and XTEM show that the structures of amorphous Nb/Si multilayers deposited at room temperature and 550 °C are quite different. The influences of surface mobility of adatoms and interfacial reaction on interfacial roughness are discussed.

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