Abstract
The emitter current crowding effect in heterojunction bipolar transistors (HBTs) has been investigated using a specific test device. This test device, which is a heterojunction bipolar transistor with two separate base fingers, also allows evaluation of the HBT base resistance. By use of this test device, the Letter demonstrate that a 3μm large HBT does not exhibit the emitter current crowding effect. An analysis of the saturated regime is also presented.
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