Abstract
Electrical parameters degradations of silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT) under repetitive electrostatic discharge (ESD) stresses have been investigated. After the repetitive ESD stresses, the degradation of threshold voltage (V th ) can be neglected due to the intact channel region. The decrease of on-resistance (R on ) is dominated by hot holes injection into the field oxide at the bird’s beak. Moreover, the saturation current (I ce,sat ) is decreased dramatically because of hot holes injection and interface states generation at the poly-gate edge. Finally, a novel structure with an additional P-type region beneath the poly-gate edge has been proposed to suppress the device degradation under repetitive ESD stresses.
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