Investigation of Electrical Behaviors Observed in Vertical GaN Nanowire Transistors Using Extended Landauer-Büttiker Formula

Fatimah Arofiati Noor,Hutomo Suryo Wasisto,Khairurrijal Khairurrijal,Muhammad Fahlesa Fatahilah,Ibnu Syuhada,Feng Yu,Toto Winata

doi:10.1109/access.2020.3047498

Fatimah Arofiati Noor, Hutomo Suryo Wasisto + Show 5 more

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In this report, we study nonlinear electrical behaviors found in vertical-architecture transistors based on wrap-around-gated gallium nitride (GaN) nanowires (NWs) by extending a one-dimensional case of the Landauer-Buttiker formula. Here, the GaN NWs are considered “almost” one-dimensional ideal wires connecting the drain and source terminals, with the gate terminal serving to control the flowing current. Unlike previous models, which require several parameters and complex calculations, our proposed model only needs three parameters and simple calculations to match the experimental data. With this model, we confirm that the maximum current before saturation is a consequence of quasi-ballistic drain current. Thus, electron mobility has no effect in this device. Using a simple formulation, we discuss gating hysteresis in the device that is mediated by the selected oxide layer interface. We show that the memory effect of the device is attributed to time-delay current. The shorter gate length increases the transmission coefficient. As a result, the model can be employed to predict the next-generation NW transistor performance.

Highlights

Gallium nitride (GaN)-based transistors are promising candidates for the next-generation power-conversion devices, which offer a low on-resistance (Ron), fast switching rate, high frequency, and highly efficient power conversion because of their wide band gap and high electron mobility [1]–[4]
We describe our model of the drain current nonlinear behavior in a vertical GaN NW transistor
GaN NANOWIRE TRANSISTOR We study the nonlinear behavior of drain current from two different types of vertical GaN nanowire transistors fabricated by Yu et al [9] and Fatahilah et al [11]

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Introduction

Gallium nitride (GaN)-based transistors are promising candidates for the next-generation power-conversion devices, which offer a low on-resistance (Ron), fast switching rate, high frequency, and highly efficient power conversion because of their wide band gap and high electron mobility [1]–[4]. AlGaN/GaN-based high electron mobility transistors (HEMTs) are an excellent candidate for highly efficient switched power supplies. Yu et al recently fabricated verticalarchitecture structures from GaN nanowires (NWs) with wrap-around gates for optimum electrostatic control, made by top-down etching [9]. They used a-plane GaN NWs for the channel and an etched nanowire architecture to eliminate stress and strain. The device can reach a drain current and transconductance of up to 314 mA/mm and 125 mS/mm, respectively [9], [10]

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