Investigation of Effective Parameters on Metal Nitride Deposition by Plasma Focus Device: Number of Shots and Substrate Axial and Angular Positions

Abstract

Plasma focus (PF) technique is potentially promising candidate for the materials processing and surface modification because of the radiations in a wide range of energies. In this review paper, we discuss and report the use of PF device for transition hard metal nitrides thin film synthesis and investigation of some effective deposition parameters in PF. In this paper, we focus on tungsten nitride film, which has promising industrial and scientific applications. A systematic study has been performed to investigate the effect of the number of focus shots and substrate axial and angular positions on the physical properties of tungsten nitride film deposited by PF device. It is indicated that these parameters are effective in order to obtain good quality tungsten nitride film and estimating the optimum conditions for growing these films with desired physical properties.