Abstract
Diamondlike carbon films on Si(111) wafer and glass have been prepared by using dual ion beam assisted deposition at room temperature. The carbon films deposited by ion beam sputtering were simultaneously bombarded by CH n+ with energies of 0.2–25 keV. These films have been characterized by RBS, AES, XPS and hardness test. The extremely high hardness and electron spectroscopy analyses showed that the diamondlike carbon films synthesized by CH n+ bombardment at 200–400 eV are much more similar to diamond than the 25 keV films.
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