Abstract
In the context of the development of radiation hard silicon microstrip detectors for the CMS Tracker, we have investigated the dependence of interstrip and backplane capacitance as well as depletion and breakdown voltage on the design parameters and substrate characteristics of the devices. Measurements have been made for strip pitches between 60 and 240 μm and various strip implants and metal widths, using multi-geometry devices, fabricated on wafers of either 〈1 1 1〉 or 〈1 0 0〉 crystal orientation, of resistivities between 1 and 6 kΩ cm and of thicknesses between 300 and 410 μm . The effect of irradiation on properties of devices has been studied with 24 GeV/c protons up to a fluence of 4.3×10 14 cm −2 .
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
