Abstract
Radiation effects on silicon microstrip detectors have been investigated on sensors similar to the ones that will be installed in the forward tracker of CMS. Sensors have been built starting from a high resistivity (about 6 kΩ cm ) n-type substrate, 〈1 1 1〉 crystal lattice orientation. Some of the wafers have been exposed to a neutron beam with a 1 MeV equivalent neutron fluence of 1.1×10 14 neutron/ cm 2 . Depletion voltage, reverse current, bulk and interstrip capacitance have been measured in laboratory before and after irradiation, directly on the full size structures. Detectors built with these structures have then been tested with a 90Sr source in laboratory. Device properties and performances with respect to signal to noise ratio are presented, emphasizing their dependence on irradiation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
