Abstract
The main features of defect formation following ionic implantation of sulfur, zinc, and argon into zinc sulfide in a wide range of doses, ion-beam currents, target temperatures, and annealing conditions were investigated. The contribution of competing mechanisms of defect formation in different conditions of doping and annealing is discussed. It is shown that defect formation can be controlled by ionic doping of zinc sulfide with the components (zinc and sulfur) in selected doping and annealing conditions.
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